ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain (Complementary)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.6A (Ta), 3.1A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 6A, 10V, 120mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V, 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：281pF @ 10V, 476pF @ 10V
- Power - Max：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXB)
- Grade：-
- Qualification：-
Download product information
Overview
The DMC2058UNS-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single PowerDI3333-8 package. The N-channel transistor features a drain-source voltage of 20V, with a maximum on-resistance of 35mΩ at VGS=10V and 40mΩ at VGS=4.5V. The P-channel transistor has a -20V rating, with a maximum on-resistance of 120mΩ at VGS=-4.5V and 150mΩ at VGS=-2.5V. Both devices operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel enhancement mode MOSFETs integrated in a single package
- Low on-state resistance for high-efficiency power management applications
- Fast switching speed combined with low input capacitance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Power-management functions
- Load switches
Procurement Notes
Verify the specific ordering suffix when purchasing. The -7 suffix indicates a tape and reel packaging quantity of 2000 units. Confirm that the required component matches this exact packing configuration to ensure compatibility with automated assembly equipment. Always cross-reference the manufacturer's latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring a matched N-channel and P-channel pair in a compact footprint. Ensure the gate drive voltage meets the minimum requirements for the desired on-resistance levels. Verify thermal dissipation capabilities against the specified thermal resistance values under the expected operating conditions and ambient temperatures.
Part Context
This part belongs to the DMC2058UNS series from Diodes Incorporated. It is designed as a next-generation MOSFET to minimize on-state resistance while maintaining superior switching performance. The product is intended for high-efficiency power-management applications where space constraints and electrical efficiency are critical design factors.
Replacement Considerations
The DMC2058UNS-13 is a compatible alternative from the same manufacturer. It utilizes the identical PowerDI3333-8 package and internal components but differs in the factory packing quantity, which is 3000 units per tape and reel instead of 2000.
