DMC21D1UDA-7B

$0.44

Description：MOSFET N/P-CH 20V 0.455A 6DFN
Series：-

SKU:d94f263cbcb3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.455A 6DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：455mA (Ta), 328mA (Ta)
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.41nC @ 4.5V, 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：31pF @ 15V, 28.5pF @ 15V
Power - Max：300mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：X2-DFN0806-6
Grade：-
Qualification：-

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DMC21D1UDA-7B

Overview

The DMC21D1UDA-7B is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device in an X2-DFN0806-6 package. The N-channel transistor provides a maximum drain-source voltage of 20V, with an on-resistance of 0.99Ω at VGS=4.5V and a continuous drain current of 455mA. The P-channel counterpart offers -20V breakdown, 1.9Ω resistance at VGS=-4.5V, and -328mA current capability. Both devices feature a low gate threshold voltage of 1.0V max, fast switching speeds, and operate within a temperature range of -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration for efficient power management
Ultra-small surface mount package dimensions of 0.8mm x 0.6mm
Low on-state resistance combined with superior switching performance
Very low gate threshold voltage enabling operation at reduced drive voltages

Applications

General purpose interfacing switch
Power management functions
Analog switch applications

Procurement Notes

Verify the specific ordering suffix '-7B' when sourcing components to ensure correct packaging specifications. Confirm that the received parts match the X2-DFN0806-6 case outline and B3 marking code. Ensure compliance with RoHS directives and verify moisture sensitivity level ratings prior to assembly.

Selection Notes

Select this component for designs requiring minimal footprint and low on-resistance in dual-channel configurations. Evaluate thermal dissipation requirements against the 300mW total power dissipation limit. Consider the 1.0V maximum gate threshold voltage for compatibility with low-voltage logic drivers.

Part Context

This part belongs to the DMC21 series of complementary MOSFETs from Diodes Incorporated. It is designed specifically for high-efficiency power management applications where space constraints are critical. The integrated nature of the N-channel and P-channel devices simplifies circuit design compared to using discrete transistors.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' complementary pairs without verifying electrical parameters and pin configurations.