DMC2400UVQ-7

Overview

The DMC2400UVQ-7 is a complementary pair enhancement mode MOSFET in an SOT563 package. It integrates one N-channel and one P-channel device. The N-channel Q1 has a drain-source voltage of 20V, continuous current of 1030mA at 25°C, and on-resistance of 0.5Ω at VGS=4.5V. The P-channel Q2 has a voltage of -20V, current of -700mA, and resistance of 1.0Ω at VGS=-4.5V. Total power dissipation is 0.45W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Complementary pair configuration integrating N-channel and P-channel devices
• Low on-state resistance for high efficiency power management
• Low gate threshold voltage below 1V
• ESD protected gate structure

Applications

• Power management functions
• Battery operated systems
• Solid-state relays
• Load switches

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation before procurement. Confirm that the component meets AEC-Q101 qualification requirements if automotive applications are intended. Ensure the selected packaging quantity aligns with manufacturing needs. Validate compliance with RoHS and halogen-free standards as specified in the datasheet notes.

Selection Notes

Select this component for applications requiring a compact complementary MOSFET pair. Evaluate thermal performance based on the 0.45W power dissipation limit at 25°C ambient. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers. Verify that the SOT563 package dimensions fit the available PCB space constraints.

Part Context

This part belongs to the DMC series of dual MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology housed in a surface-mount SOT563 package. The device is designed to minimize on-state resistance while maintaining fast switching speeds for efficient power control.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.