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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.03A, 700mA
- Rds On (Max) @ Id, Vgs：480mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：37.1pF @ 10V
- Power - Max：450mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMC2450UV-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, housed in an SOT563 surface-mount package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a drain-source voltage of 20V, with a maximum on-resistance of 0.5Ω at VGS=4.5V and 0.9Ω at VGS=1.8V. Q2 has a -20V rating, with maximum on-resistance of 1.0Ω at VGS=-4.5V and 2.0Ω at VGS=-1.8V. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Complementary N/P-channel configuration for efficient power management
- Low on-resistance optimized for high-efficiency applications
- Low gate threshold voltage enabling operation with low drive signals
- ESD protected gates and ultra-small surface mount packaging
Applications
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Load Switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and lead-free characteristics directly with the manufacturer or authorized distributors before procurement. Ensure the selected variant matches the required tape and reel format for automated assembly processes.
Selection Notes
Select this component for designs requiring a compact complementary MOSFET pair in an SOT563 footprint. Evaluate thermal resistance values based on the specific PCB copper area and mounting conditions. Consider the gate threshold voltage limits when designing control circuits for low-voltage battery systems.
Part Context
This part belongs to Diodes Incorporated's generation of complementary MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. The DMC2450UV series specifically targets high-efficiency power management applications where space constraints and low power consumption are critical design parameters.
Replacement Considerations
DMC2450UV-7
FAQ
What is the maximum continuous drain current for the N-channel device?
The maximum continuous drain current for the N-channel device (Q1) is 1,030 mA at TA = +25°C with VGS = 4.5V.
Does the device include internal gate protection?
Yes, the datasheet specifies that both the N-channel and P-channel devices feature ESD protected gates.
What is the typical input capacitance for the N-channel device?
The typical input capacitance (Ciss) for the N-channel device is 37.1 pF, measured at VDS = 10V and f = 1.0MHz.
