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Product Detailed Parameters
- Description：MOSFET N/P-CH 25V/30V TSOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V, 30V
- Current - Continuous Drain (Id) @ 25°C：400mA, 3.2A
- Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：26.2pF @ 10V
- Power - Max：1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-23-6
- Grade：-
- Qualification：-
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Overview
The DMC25D0UVT-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a 25V drain-source voltage, 4Ω on-resistance at VGS=4.5V, and 0.4A continuous current. Q2 offers a -30V rating, 80mΩ on-resistance at VGS=-12V, and -3.2A continuous current. The component supports a junction temperature range of -55°C to +150°C with 1.2W power dissipation.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
- Low On-Resistance for High Efficiency Power Management
- Fast Switching Speed with Low Input Capacitance
- ESD Protected Gate on N-Channel (>6kV Human Body Model)
- Qualified to AEC-Q101 Standards for High Reliability
Applications
- DC-DC Converters
- Power Management Functions
- Load Switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Ensure compliance with RoHS directives and confirm lead-free status requirements for the target assembly process. Cross-reference the manufacturer's latest datasheet revision to validate electrical parameters before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a compact dual-MOSFET solution in a TSOT26 footprint. Evaluate the distinct drive voltage requirements for the N-channel (4.5V) versus the P-channel (-12V or -4.5V) to ensure compatibility with the system logic levels. Consider the thermal resistance characteristics when designing heat dissipation strategies for high-current loads.
Part Context
This part belongs to the DMC25 series of complementary MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for high-efficiency power management applications where space constraints necessitate a small surface-mount package like TSOT26.
Replacement Considerations
Consult the manufacturer's official documentation for verified substitute part numbers. Ensure any replacement maintains identical pinout configuration, voltage ratings, and thermal characteristics to guarantee circuit compatibility without redesign.
