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Product Detailed Parameters
- Description：MOSFET N/P-CH 25V/12V TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V, 12V
- Current - Continuous Drain (Id) @ 25°C：500mA, 3.9A
- Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：27.6pF @ 10V
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMC25D1UVT-7 is a complementary pair enhancement mode MOSFET in a TSOT26 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a 25V drain-source voltage, 0.5A continuous current, and 4Ω on-resistance at VGS=4.5V. Q2 provides -12V breakdown, -3.9A current at VGS=-4.5V, and 55mΩ on-resistance. The component operates between -55°C and +150°C with 1.3W power dissipation.
Feature Summary
- Complementary N/P-channel configuration for efficient power management
- Low on-state resistance to minimize conduction losses
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- DC-DC Converters
- Power Management Functions
- Load Switch
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Ensure compliance with RoHS and AEC-Q101 standards as stated in the datasheet. Confirm that the TSOT26 package dimensions match the target PCB layout requirements before finalizing procurement.
Selection Notes
Select this component when a compact complementary MOSFET pair is required for low-voltage applications. The N-channel device suits 25V logic-level control, while the P-channel device handles higher currents up to 3.9A. Evaluate thermal resistance and junction temperature limits under expected load conditions to ensure reliable operation within the specified operating range.
Part Context
This part belongs to the DMC25 series of complementary MOSFETs from Diodes Incorporated. It is designed for high-efficiency power management applications requiring small form factors. The TSOT26 package allows for space-constrained designs while maintaining robust electrical performance for switching and load control tasks.
Replacement Considerations
Consult the official Diodes Incorporated catalog for verified alternative part numbers within the same series or package type. Ensure any substitute matches the pinout, voltage ratings, and thermal characteristics of the original component.
