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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 1.34A SOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.34A (Ta), 1.14A (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.74nC @ 4.5V, 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：60.67pF @ 16V, 59.76pF @ 16V
- Power - Max：1.12W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC2700UDMQ-7 is a 20V complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device in an SOT26 surface-mount package. The N-channel transistor (Q1) supports a continuous drain current of 1.34A with a maximum on-resistance of 0.4Ω at VGS=4.5V. The P-channel transistor (Q2) supports -1.14A with a maximum on-resistance of 0.7Ω at VGS=-4.5V. Both devices feature low gate threshold voltages below 1V, fast switching speeds, and AEC-Q101 automotive qualification.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFET Pair
- Low On-State Resistance for High Efficiency Power Management
- Low Gate Threshold Voltage Below 1V
- Fast Switching Speed with Low Input/Output Leakage
- ESD Protected and Totally Lead-Free RoHS Compliant
Applications
- Portable Electronics
- Automotive Applications Requiring Specific Change Control
Procurement Notes
Verify the component against the official datasheet DS39494 Rev. 2-3 to confirm electrical parameters and package dimensions. Ensure compatibility with SOT26 footprint requirements. Check for AEC-Q101 qualification status if automotive use is intended. Confirm lead-free and halogen-free compliance with relevant directives before integration into final assemblies.
Selection Notes
Select this component for applications requiring a compact complementary MOSFET pair with low on-resistance and fast switching capabilities. The SOT26 package is suitable for space-constrained designs. Verify that the 20V breakdown voltage and current ratings meet the specific circuit requirements. Consider the thermal resistance and power dissipation limits when designing heat management solutions.
Part Context
This part belongs to the DMC2700UDM series of 20V complementary enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is suitable for high-efficiency power management applications in portable electronics and automotive sectors requiring specific change control protocols.
Replacement Considerations
The datasheet explicitly recommends using DMC2710UDWQ as a replacement. This alternative should be evaluated for pin compatibility and electrical parameter alignment before substitution.
