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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.75A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta), 600mA (Ta)
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V, 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V, 49pF @ 16V
- Power - Max：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMC2710UDW-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT363 surface-mount package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a drain-source voltage of 20V, a maximum continuous drain current of 0.75A at +25°C, and a maximum on-resistance of 0.45Ω at VGS = 4.5V. Q2 provides a drain-source voltage of -20V, a maximum continuous drain current of -0.6A at +25°C, and a maximum on-resistance of 0.75Ω at VGS = -4.5V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N/P-channel configuration for efficient power management
- Low on-state resistance to minimize conduction losses
- Ultra-small SOT363 surface-mount footprint
- Integrated gate protection diodes
Applications
- Battery-operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental standards, such as RoHS compliance and halogen-free status, prior to finalizing procurement plans. Ensure compatibility with standard surface-mount assembly processes.
Selection Notes
Select this component when a compact complementary MOSFET pair is required for low-voltage switching applications. Evaluate the on-resistance values at the intended gate drive voltages to ensure adequate current handling. Consider the thermal resistance characteristics and available board space when designing the heat dissipation strategy for the SOT363 package.
Part Context
This part belongs to Diodes Incorporated's lineup of new generation complementary MOSFETs designed to balance low on-resistance with superior switching performance. It serves as a discrete solution for replacing single-channel MOSFETs in applications requiring both high-side and low-side switching capabilities within a minimal footprint.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Ensure any replacement maintains identical pin configurations, voltage ratings, and current capabilities to guarantee circuit compatibility.
