DMC2710UV-13

$0.07

Description：MOSFET N/P-CH 20V 1.1A SOT563
Series：-

SKU:24315a10808e Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 1.1A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：1.1A (Ta), 800mA (Ta)
Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V, 49pF @ 16V
Power - Max：460mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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DMC2710UV-13

Overview

The DMC2710UV-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device within an SOT563 surface-mount package. The N-channel transistor provides a drain-source breakdown voltage of 20V with a maximum continuous drain current of 1.1A at +25°C, while the P-channel counterpart offers -20V breakdown and -0.8A current capability. Both transistors feature low on-state resistance, with the N-channel reaching 0.4Ω at VGS = 4.5V and the P-channel reaching 0.7Ω at VGS = -4.5V. The components are designed for high-efficiency power management applications.

Feature Summary

Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
Ultra-Small Surface Mount Package (SOT563)
Low On-Resistance and Low Gate Threshold Voltage
ESD Protected Gate

Applications

Battery Operated Systems
Solid-State Relays
Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, and Transistors
Power Supply Converter Circuits

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The DMC2710UV-13 designation indicates a tape and reel configuration containing 10,000 units per reel. Confirm that the required component matches this exact quantity specification before finalizing procurement orders.

Selection Notes

Select this component when space-constrained designs require a matched N/P-channel pair in a single SOT563 footprint. Ensure the application gate drive voltage meets the threshold requirements, as the N-channel requires VGS = 4.5V for optimal RDS(ON) performance. Verify thermal dissipation capabilities against the junction-to-ambient resistance specifications provided in the datasheet.

Part Context

This part belongs to the DMC2710 series of complementary MOSFETs from Diodes Incorporated. The UV suffix specifically denotes the SOT563 case style. Other variants in the family utilize different packages such as SOT363 or SOT26-6, which offer distinct pin configurations and thermal characteristics suitable for varying board layout constraints.

Replacement Considerations

Direct replacements include the DMC2710UDW-7 and DMC2710UV-7. Note that these substitutes differ primarily in their packaging format; the DW variant uses a SOT363 case, while the UV-7 utilizes the same SOT563 package but comes in a 3,000-unit tape and reel rather than the 10,000-unit reel of the -13 suffix.