DMC2710UV-7

Overview

The DMC2710UV-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device in an SOT563 surface-mount package. The N-channel transistor (Q1) supports a drain-source voltage of 20V with a maximum continuous drain current of 1.1A at +25°C, while the P-channel transistor (Q2) provides -20V breakdown and -0.8A current capability. Key electrical parameters include a typical on-resistance of 0.4Ω for Q1 and 0.7Ω for Q2 at VGS = ±4.5V. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
• Low On-Resistance Design for High-Efficiency Power Management
• Low Gate Threshold Voltage (< 1V for N-Channel, < -1V for P-Channel)
• ESD Protected Gates with Low Input/Output Leakage

Applications

• Battery Operated Systems
• Solid-State Relays
• Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, and Transistors
• Power Supply Converter Circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel configuration typically contains 3000 units per reel. Confirm that the component meets RoHS compliance requirements and ensure proper handling procedures are followed due to ESD sensitivity. Cross-reference the manufacturer's datasheet revision history for any updates to mechanical or electrical specifications before finalizing procurement orders.

Selection Notes

Select this component when space-constrained designs require a matched N/P-channel pair in a single SOT563 footprint. Ensure the application logic levels align with the low gate threshold voltages specified. Evaluate thermal dissipation capabilities based on the junction-to-ambient resistance values provided in the datasheet. Verify that the required switching speeds and capacitance characteristics meet the system's dynamic performance requirements.

Part Context

This part belongs to Diodes Incorporated's portfolio of small-signal MOSFETs designed for portable electronics and power management applications. The SOT563 package allows for high-density PCB layouts compared to larger discrete packages. It serves as a compact solution for load switching and level shifting tasks where dual polarity control is necessary within a minimal physical envelope.

Replacement Considerations

Direct replacements must match the SOT563 pinout and complementary N/P-channel configuration. Verify that substitute components offer equivalent or superior BVDSS ratings and comparable RDS(ON) values at the intended operating gate voltages. Thermal resistance and package dimensions should be checked to ensure compatibility with existing board footprints.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 1.1A at an ambient temperature of +25°C.

Does the DMC2710UV-7 feature internal gate protection?

Yes, the datasheet specifies that the gates are ESD protected.

What is the typical input capacitance for the N-channel transistor?

The typical input capacitance (Ciss) for the N-channel transistor is 42 pF, measured at VDS = 16V and f = 1.0MHz.