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The DMC2990UDJQ-7B is a complementary pair enhancement mode MOSFET in an SOT963 package. It integrates one N-channel and one P-channel device. The N-channel transistor has a drain-source voltage of 20V, with on-resistance values of 0.99Ω at VGS=4.5V and 1.2Ω at VGS=2.5V. Continuous drain currents reach 450mA at VGS=4.5V and 400mA at VGS=2.5V. The P-channel transistor features a -20V breakdown voltage, with on-resistances of 1.9Ω at VGS=-4.5V and 2.4Ω at VGS=-2.5V. Its continuous drain currents are rated at -310mA and -280mA respectively. Total power dissipation is 350mW.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details. Confirm that the component meets all required automotive qualification standards before integration into final designs. Ensure compatibility with existing PCB layouts and thermal management strategies.
Select this component when a compact dual MOSFET solution is required for low-voltage switching applications. Consider the specific on-resistance requirements at different gate drive voltages to ensure adequate current handling capabilities. Verify that the package dimensions fit within the available board space constraints.
This part belongs to the DMC2990UDJQ series from Diodes Incorporated. It is designed as a complementary pair for use in automotive and general electronic applications requiring small form factor solutions.
DMC2990UDJQ-7 is a confirmed substitute part number listed in the same datasheet.