DMC2991UDJ-7B

$0.24

Description：MOSFET N/P-CH 20V 0.5A SOT963
Series：-

SKU:3178310d83c9 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.5A SOT963
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta), 360mA (Ta)
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.35nC @ 4.5V, 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：21.5pF @ 15V, 17pF @ 16V
Power - Max：380mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-963
Supplier Device Package：SOT-963
Grade：-
Qualification：-

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DMC2991UDJ-7B

Overview

The DMC2991UDJ-7B is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device in an ultra-small SOT963 surface mount package measuring 1mm x 1mm. The N-channel transistor provides a maximum drain-source voltage of 20V with a continuous drain current of 500mA at 25°C, while the P-channel counterpart offers -20V breakdown and -360mA continuous current. Both channels feature low on-resistance and fast switching speeds, supported by ESD-protected gates and fully RoHS-compliant lead-free construction.

Feature Summary

Ultra-small 1mm x 1mm SOT963 surface mount package
Low on-state resistance for high-efficiency power management
Very low gate threshold voltage (1.0V max) for low-voltage operation
ESD protected gate structure

Applications

General-purpose interfacing switches
Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' to confirm the required taping orientation, as it differs from the standard '-7' variant. Confirm compliance with RoHS 2 and RoHS 3 directives and ensure the 'Green' device specifications regarding halogen and antimony content meet project requirements before finalizing procurement orders.

Selection Notes

Select this component when space-constrained designs require a dual complementary MOSFET configuration. Ensure the application operates within the 20V drain-source voltage limit and respects the thermal constraints defined by the 329 °C/W junction-to-ambient resistance. Verify that the gate drive voltage meets the minimum threshold requirements for the desired on-resistance performance.

Part Context

This part belongs to the DMC2991UDJ series of complementary MOSFETs. The '-7B' suffix specifically denotes a distinct tape and reel orientation compared to the standard '-7' packaging option. Both variants share identical electrical characteristics and are housed in the same SOT963 package.

Replacement Considerations

DMC2991UDJ-7

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is ±8 V for both the N-channel and P-channel devices.

Does the device include body diodes?

Yes, the datasheet specifies Maximum Continuous Body Diode Forward Current ratings for both channels, confirming the presence of intrinsic body diodes.