DMC3016LNS-13

$0.21

Description：MOSFET N/P-CH 30V 9A PWRDI3333
Series：-

SKU:2d1b15dbdf38 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 9A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 6.8A (Ta)
Rds On (Max) @ Id, Vgs：16mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1184pF @ 15V, 1188pF @ 15V
Power - Max：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8
Grade：Automotive
Qualification：AEC-Q101

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DMC3016LNS-13

Overview

The DMC3016LNS-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single PowerDI3333-8 package. The N-channel transistor supports a drain-source voltage of 30V with a maximum on-resistance of 16mΩ at VGS=10V and a continuous drain current of 9.0A. The P-channel counterpart features a -30V breakdown voltage, a maximum on-resistance of 28mΩ at VGS=-10V, and a continuous drain current of -6.8A. Both devices operate across a junction temperature range of -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel enhancement mode MOSFETs integrated into a single surface-mount package
Optimized for low on-state resistance while maintaining fast switching performance
Low input capacitance and low input/output leakage characteristics
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and moisture sensitivity levels before finalizing procurement plans.

Selection Notes

Select this component when a compact solution requires matched N-channel and P-channel switching capabilities. Ensure the application operates within the specified 30V drain-source voltage limits and accounts for thermal dissipation requirements given the small form factor.

Part Context

This part belongs to the DMC3016 series of complementary MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UXB) case style, designed to minimize footprint while providing adequate thermal performance for high-efficiency power management applications.

Replacement Considerations

Consult official datasheets for alternative parts in the DMC3016 series or other complementary MOSFET packages. Verify pinout compatibility and electrical parameter equivalence before substitution.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 9.0A at a case temperature of +25°C.

Is the DMC3016LNS suitable for life support devices?

No, Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without express written approval.