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The DMC3016LSD-13 is a complementary pair enhancement mode MOSFET in an SO-8 package. It integrates one N-channel and one P-channel device. The N-channel Q1 has a drain-source voltage of 30V, on-resistance of 16mΩ at VGS=10V, and continuous current of 8.2A. The P-channel Q2 has a breakdown voltage of -30V, on-resistance of 28mΩ at VGS=-10V, and continuous current of -6.2A. Total power dissipation is 1.2W at +25°C. Operating temperature ranges from -55°C to +150°C.
Verify the datasheet revision (DS36935 Rev. 4) matches the production batch. Confirm the suffix '-13' indicates tape and reel packaging with 2,500 units per reel. Ensure compliance with RoHS 2 and J-STD-020 moisture sensitivity level 1 requirements during storage and soldering processes.
Select this component when a matched N/P pair is required for synchronous rectification or load switching. Verify that the 30V rating accommodates system transients. Check thermal resistance values against the PCB copper area available for heat dissipation to ensure junction temperatures remain within limits.
This part belongs to the DMC3016 series of complementary MOSFETs manufactured by Diodes Incorporated. It utilizes a standard SO-8 surface mount case with a molded plastic green molding compound. The product marking includes the code C3016LD followed by date codes.
DMC3016LDV-13
The gate threshold voltage ranges from 1.0V to 3.0V for both the N-channel and P-channel devices.
For the N-channel, RDS(ON) is 16mΩ at VGS=10V and 20mΩ at VGS=4.5V. For the P-channel, it is 28mΩ at VGS=-10V and 38mΩ at VGS=-4.5V.