DMC3016LSD-13

DMC3016LSD-13

$0.70
  • Description:MOSFET N/P-CH 30V 8.2A/6.2A 8SO
  • Series:-

SKU:78b7bf3dfbe8 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 8.2A/6.2A 8SO
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8.2A, 6.2A
  • Rds On (Max) @ Id, Vgs:16mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1415pF @ 15V
  • Power - Max:1.2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

Download product information

DMC3016LSD-13

Overview

The DMC3016LSD-13 is a complementary pair enhancement mode MOSFET in an SO-8 package. It integrates one N-channel and one P-channel device. The N-channel Q1 has a drain-source voltage of 30V, on-resistance of 16mΩ at VGS=10V, and continuous current of 8.2A. The P-channel Q2 has a breakdown voltage of -30V, on-resistance of 28mΩ at VGS=-10V, and continuous current of -6.2A. Total power dissipation is 1.2W at +25°C. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Complementary N/P-channel configuration for high-efficiency power management
  • Low input capacitance and fast switching speed
  • Qualified to AEC-Q101 standards for automotive reliability

Applications

  • DC-DC Converters
  • Power Management Functions
  • Backlighting

Procurement Notes

Verify the datasheet revision (DS36935 Rev. 4) matches the production batch. Confirm the suffix '-13' indicates tape and reel packaging with 2,500 units per reel. Ensure compliance with RoHS 2 and J-STD-020 moisture sensitivity level 1 requirements during storage and soldering processes.

Selection Notes

Select this component when a matched N/P pair is required for synchronous rectification or load switching. Verify that the 30V rating accommodates system transients. Check thermal resistance values against the PCB copper area available for heat dissipation to ensure junction temperatures remain within limits.

Part Context

This part belongs to the DMC3016 series of complementary MOSFETs manufactured by Diodes Incorporated. It utilizes a standard SO-8 surface mount case with a molded plastic green molding compound. The product marking includes the code C3016LD followed by date codes.

Replacement Considerations

DMC3016LDV-13

FAQ

What are the specific gate threshold voltage ranges?

The gate threshold voltage ranges from 1.0V to 3.0V for both the N-channel and P-channel devices.

How does the on-resistance vary with gate voltage?

For the N-channel, RDS(ON) is 16mΩ at VGS=10V and 20mΩ at VGS=4.5V. For the P-channel, it is 28mΩ at VGS=-10V and 38mΩ at VGS=-4.5V.

DMC3016LSD-13DMC3016LSD-13
$0.70
Buy Now