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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 20A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc), 17A (Tc)
- Rds On (Max) @ Id, Vgs：31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：1.85V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 10V, 13.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：383pF @ 15V, 782pF @ 15V
- Power - Max：1.18W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMC3020UDVW is a complementary pair enhancement mode MOSFET in a POWERDI3333-8 package. It integrates an N-channel Q1 and a P-channel Q2. Q1 offers a maximum drain-source voltage of 30V, with on-resistance of 31mΩ at VGS=10V (ID=6A) and 40mΩ at VGS=4.5V (ID=5A). Continuous current reaches 20A at TC=+25°C. Q2 provides -30V breakdown, with on-resistance of 42mΩ at VGS=-10V (ID=-4.9A) and 75mΩ at VGS=-4.5V (ID=-3.7A), supporting -17A continuous current at TC=+25°C. The device operates up to +150°C junction temperature.
Feature Summary
- Complementary N-channel and P-channel MOSFETs integrated in a single compact package
- Low on-state resistance for high-efficiency power management applications
- Fast switching speed combined with low input capacitance
- Wettable flank design facilitates improved optical inspection during assembly
Applications
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix when purchasing. The -7 suffix indicates a tape and reel quantity of 2,000 units, while the -13 suffix corresponds to 3,000 units per reel. Confirm that the required packing quantity matches the project needs before placing orders. Ensure compliance with RoHS and lead-free requirements as specified in the manufacturer's documentation.
Selection Notes
Select this component for designs requiring matched N-channel and P-channel performance in a small footprint. Verify gate drive voltages against the specified thresholds; the device supports both 10V and 4.5V logic levels. Consider thermal dissipation capabilities based on the PCB copper area and ambient temperature conditions to ensure operation within the safe operating area limits.
Part Context
This part belongs to Diodes Incorporated's complementary MOSFET family designed for space-constrained power applications. It utilizes the POWERDI3333-8/SWP package to provide enhanced thermal performance and reliable soldering through wettable flanks. The series targets efficiency improvements in portable electronics and industrial control systems where board space is limited.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided datasheet. Engineers should consult the manufacturer directly or review the official replacement guide for qualified alternatives.
