DMC3021LK4-13

$0.73

Description：MOSFET N/P-CH 30V 9.4A TO252-4L
Series：-

SKU:de17cad32ed9 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 9.4A TO252-4L
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel, Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9.4A, 6.8A
Rds On (Max) @ Id, Vgs：21mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：751pF @ 10V
Power - Max：2.7W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package：TO-252-4L
Grade：-
Qualification：-

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DMC3021LK4-13

Overview

The DMC3021LK4-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and P-channel device in a single TO-252-4 package. The N-channel Q1 offers a maximum RDS(ON) of 21mΩ at VGS=10V with a continuous drain current (ID) of 9.4A at TA=+25°C. The P-channel Q2 provides a maximum RDS(ON) of 39mΩ at VGS=-10V with an ID of -6.8A at TA=+25°C. Both channels feature a Drain-Source Voltage (BVDSS) rating of ±30V. Total power dissipation reaches 2.7W at TA=+25°C, with a junction temperature range of -55°C to +150°C.

Feature Summary

Integrated complementary N-channel and P-channel MOSFETs within a single compact package
Optimized for low on-state resistance and high switching performance
Qualified to AEC-Q101 standards for automotive reliability applications

Applications

Motor Control
Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2500 units per reel. Confirm that the component meets RoHS compliance and is halogen-free as specified in the manufacturer's documentation. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when space constraints require a dual complementary switch solution. The TO-252-4 footprint allows for efficient thermal management via the exposed drain pad. Evaluate the gate threshold voltage requirements against the driver circuit capabilities to ensure reliable turn-on characteristics under varying load conditions.

Part Context

This part belongs to the DMC3021 series of complementary MOSFETs from Diodes Incorporated. It serves as a specialized discrete solution for bridge circuits where matched N and P devices are required. The integrated design simplifies PCB layout compared to using separate discrete components.

Replacement Considerations

Direct replacements must match the TO-252-4 package and provide equivalent ±30V breakdown voltage. Verify that alternative complementary pairs offer comparable RDS(ON) values at similar gate drive voltages to maintain efficiency targets.

FAQ

What is the maximum pulsed drain current capability?

The N-channel supports a pulsed drain current of 70A, while the P-channel supports -50A, both measured with a 10µs pulse duration and 1% duty cycle.

How does the gate threshold voltage vary with temperature?

The datasheet indicates that the gate threshold voltage decreases as the junction temperature increases, ranging from approximately 2.5V at -55°C to lower values at +150°C.