DMC3021LSDQ-13

$0.80

Description：MOSFET N/P-CH 30V 8.5A/7A 8SO
Series：-

SKU:fc194ad0784f Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 8.5A/7A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8.5A, 7A
Rds On (Max) @ Id, Vgs：21mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：767pF @ 10V
Power - Max：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMC3021LSDQ-13

Overview

The DMC3021LSDQ-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device in an SO-8 package. The N-channel transistor provides a maximum drain-source voltage of 30V, with continuous drain currents of 8.5A at +25°C and 7.1A at +85°C. Its on-resistance is 21mΩ at VGS=10V and 32mΩ at VGS=4.5V. The P-channel counterpart offers -30V breakdown, with continuous currents of -7.0A at +25°C and -4.5A at +85°C. On-resistance values are 39mΩ at VGS=-10V and 53mΩ at VGS=-4.5V. Total power dissipation is rated at 2.5W.

Feature Summary

Complementary N/P-channel configuration for efficient power management
Low on-state resistance to minimize conduction losses
Fast switching speed with low input capacitance
Qualified to AEC-Q101 standards for high reliability

Applications

Power Management Functions
Analog Switch
Load Switch

Procurement Notes

Verify the component against the official datasheet DS37338 Rev. 1-2 to confirm electrical parameters and physical dimensions. Ensure that the SO-8 package matches the required PCB footprint and pad layout specifications provided by the manufacturer. Confirm compliance with RoHS and REACH directives if environmental regulations apply to the final assembly.

Selection Notes

Select this component when a matched N/P-channel pair is required within a single package to save board space. Consider the thermal resistance of 50 °C/W and the 2.5W power dissipation limit when designing heat dissipation strategies. Verify that the gate threshold voltages align with the logic levels of the driving circuitry for reliable switching performance.

Part Context

This part belongs to the DMC3021 series from Diodes Incorporated, designed specifically for high-efficiency power management applications. The 'Q' suffix indicates AEC-Q101 qualification, making it suitable for automotive environments. The '-13' suffix denotes the standard tape and reel packaging format containing 2,500 units per reel.