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Product Detailed Parameters
- Description：MOSFET N/P-CH 15A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 4.5V, 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V, 1188pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3025LDV-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single PowerDI3333-8 (Type UXC) package. The N-channel transistor supports a drain-source voltage of 30 V with a maximum on-resistance of 25 mΩ at VGS = 10 V and a continuous drain current of 15 A. The P-channel counterpart provides -30 V breakdown, 25 mΩ resistance at VGS = -10 V, and -15 A current capability. Total power dissipation reaches 1.9 W under thermal bias conditions.
Feature Summary
- Complementary N/P-channel configuration for efficient dual-transistor integration
- Minimized on-state resistance to support high efficiency power management
- Optimized switching performance through low input capacitance and fast transition times
- Totally lead-free construction with full RoHS compliance and halogen-free materials
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantities. The -7 suffix indicates a 2000-unit tape and reel format. Confirm that the component meets all applicable environmental directives required for the target assembly process before finalizing procurement orders.
Selection Notes
Select this component when space-constrained designs require matched N/P-channel pairs in a single footprint. Ensure the application operates within the specified 30 V drain-source limits and accounts for the 119 °C/W thermal resistance if mounted on standard FR-4 substrates without significant copper thermal planes.
Part Context
This part belongs to the DMC3025 series of complementary MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UXC) surface-mount package, which offers a compact form factor suitable for dense PCB layouts while maintaining adequate thermal dissipation characteristics for general-purpose switching applications.
Replacement Considerations
Direct replacements include the DMC3025LDV-13 variant, which shares identical electrical specifications but utilizes a 3000-unit tape and reel packaging format. Verify pinout compatibility and thermal performance metrics when substituting across different packaging options.
