DMC3025LNS-13

$0.18

Description：MOSFET N/P-CH 30V 7.2A PWRDI3333
Series：-

SKU:c164a3b76fd8 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 7.2A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta), 6.8A (Ta)
Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V, 1188pF @ 15V
Power - Max：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8
Grade：Automotive
Qualification：AEC-Q101

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DMC3025LNS-13

Overview

The DMC3025LNS-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single POWERDI®3333-8 package. The N-channel transistor provides a drain-source voltage of 30V, a continuous drain current of 7.2A at 25°C, and a maximum on-resistance of 25mΩ at VGS=10V. The P-channel counterpart offers a -30V breakdown, -6.8A continuous current, and a maximum on-resistance of 28mΩ at VGS=-10V. Both devices operate across a junction temperature range of -55°C to +150°C.

Feature Summary

Complementary Pair Configuration
Low On-Resistance
Fast Switching Speed

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The -13 suffix indicates a tape and reel quantity of 3,000 units in the POWERDI®3333-8 case. Confirm RoHS compliance status and lead-free specifications directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component for applications requiring matched N-channel and P-channel switching characteristics in a compact footprint. Ensure the gate drive voltage meets the minimum requirements for the specified on-resistance targets. Evaluate thermal management needs based on the 1.2W power dissipation rating under standard FR-4 board conditions.

Part Context

This part belongs to the DMC3025 series of complementary MOSFETs from Diodes Incorporated. It utilizes the POWERDI®3333-8 surface-mount package, designed for high-efficiency power management. The series focuses on minimizing on-state resistance while maintaining fast switching performance for modern electronic designs.