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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 8.2A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8.2A (Ta), 8A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V, 10.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：641pF @ 15V, 1241pF @ 15V
- Power - Max：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3026LSD-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single SO-8 surface-mount package. The N-channel transistor supports a drain-source voltage of 30V with a maximum continuous drain current of 6.5A at +25°C, while the P-channel counterpart provides -30V breakdown and -6.2A current capability. Both transistors exhibit low on-resistance, rated at 25mΩ for Q1 and 28mΩ for Q2 at VGS = 10V/-10V respectively. The component operates across a temperature range of -55°C to +150°C and meets AEC-Q101 automotive reliability standards.
Feature Summary
- Complementary N/P-channel configuration in a compact SO-8 package
- Optimized for high efficiency power management applications
- Qualified to AEC-Q101 standards for high reliability
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging format containing 2,500 units per reel. Confirm that the component meets the required environmental specifications, specifically the halogen-free and antimony-free 'Green' device definition provided by the manufacturer. Ensure the application design accounts for the thermal resistance values specified under steady-state conditions versus short-duration pulse testing.
Selection Notes
Select this component when a matched N/P-channel pair is required for synchronous rectification or bridge driver circuits. The SO-8 package offers a balance between thermal dissipation and board space constraints. Designers should evaluate the gate charge characteristics and switching speeds against the target frequency requirements. Verify that the load current does not exceed the continuous ratings defined at the expected ambient operating temperature.
Part Context
This part belongs to the DMC3026 series of complementary MOSFETs from Diodes Incorporated. It serves as a discrete solution for replacing dual discrete MOSFETs in space-constrained designs. The product is designed to minimize on-state resistance while maintaining superior switching performance compared to standard general-purpose MOSFETs.
Replacement Considerations
DMC3028LSD-13: Offers higher current ratings but may have different capacitance profiles.
FAQ
What are the maximum continuous drain currents for the N-channel and P-channel devices?
At TA = +25°C, the N-channel (Q1) supports 6.5A and the P-channel (Q2) supports -6.2A.
Is the DMC3026LSD qualified for automotive applications?
Yes, the component is qualified to AEC-Q101 standards for high reliability.
What is the typical input capacitance for the N-channel device?
The typical input capacitance (Ciss) for Q1 is 641 pF at VDS = 15V and f = 1.0MHz.
