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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 5.5A/5.8A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.5A, 5.8A
- Rds On (Max) @ Id, Vgs：27mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：641pF @ 15V
- Power - Max：1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMC3028LSDX-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) in a single SO-8 package. The N-channel transistor provides a maximum drain-source breakdown voltage of 30V, with a typical on-resistance of 27mΩ at VGS=10V and 35mΩ at VGS=4.5V. Continuous drain current reaches 7.2A at +25°C. The P-channel counterpart offers -30V breakdown voltage, with typical on-resistance values of 25mΩ at VGS=-10V and 41mΩ at VGS=-4.5V. Total power dissipation is rated at 1.5W under steady-state conditions.
Feature Summary
- Complementary N/P-channel configuration for high-efficiency power management
- Low input capacitance and fast switching speed characteristics
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The datasheet identifies the base part number as DMC3028LSDX with a standard tape and reel packaging quantity of 2,500 units. Confirm that the requested suffix matches the required packaging format and ensure compliance with RoHS directives and halogen-free requirements specified by the manufacturer.
Selection Notes
Select this component when a compact dual-transistor solution is required for low-voltage power switching applications. The SO-8 package facilitates surface mount assembly while providing adequate thermal performance for moderate power levels. Evaluate gate threshold voltages and on-resistance requirements at specific drive voltages to ensure optimal efficiency within the target circuit design constraints.
Part Context
This component belongs to the DMC3028 series of complementary MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The DMC3028LSDX variant specifically utilizes an SO-8 case configuration, distinguishing it from other package options available within the broader product family.
Replacement Considerations
The datasheet notes that an automotive-compliant version is available under the separate part number DMC3028LSDXQ. Verify if the specific qualification requirements of the application necessitate the Q-series variant over the standard industrial grade part.
