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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 8.1A/7A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8.1A, 7A
- Rds On (Max) @ Id, Vgs：32mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：404.5pF @ 15V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMC3032LSD-13 is a complementary pair enhancement mode MOSFET in an SO-8 package. The N-channel device (Q1) has a BVDSS of 30V, with RDS(ON) max at 32mΩ @ VGS=10V and 46mΩ @ VGS=4.5V. Continuous drain current is 8.1A @ 25°C. The P-channel device (Q2) has a BVDSS of -30V, with RDS(ON) max at 39mΩ @ VGS=-10V and 53mΩ @ VGS=-4.5V. Continuous drain current is -7.0A @ 25°C. Power dissipation is 2.5W, operating temperature range is -55°C to +150°C.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
- Low On-Resistance for High Efficiency Power Management
- Fast Switching Speed and Low Input/Output Leakage
- Qualified to AEC-Q101 Standards for High Reliability
Applications
- Power Management Functions
- Analog Switch
- Load Switch
Procurement Notes
Verify the component against Diodes Incorporated datasheet DS32153 Rev. 3-2. Confirm the part number suffix matches the tape and reel packaging specification. Ensure compliance with RoHS and halogen-free requirements as defined by the manufacturer. Check for AEC-Q101 qualification status if automotive applications are intended.
Selection Notes
Select this component for applications requiring low on-resistance and fast switching in power management circuits. Consider the SO-8 package constraints and thermal resistance values. Evaluate gate threshold voltage requirements against the specified ranges for both N-channel and P-channel devices.
Part Context
The DMC3032LSD belongs to Diodes Incorporated's complementary MOSFET portfolio. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for high efficiency power management applications where compact size and reliability are critical.
Replacement Considerations
Consult Diodes Incorporated documentation for direct substitutes within the DMC series. Verify pinout compatibility and electrical parameters such as RDS(ON) and BVDSS before replacement.
FAQ
What is the maximum continuous drain current for the N-channel device?
The maximum continuous drain current for the N-channel device (Q1) is 8.1A at TA = +25°C.
Is the DMC3032LSD qualified for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability.
What is the operating temperature range?
The operating junction and storage temperature range is -55°C to +150°C.
