DMC3035LSD-13

DMC3035LSD-13

$0.18
  • Description:MOSFET N/P-CH 30V 6.9A/5A 8SOP
  • Series:-

SKU:f8513a3492ec Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 6.9A/5A 8SOP
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.9A, 5A
  • Rds On (Max) @ Id, Vgs:35mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:384pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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DMC3035LSD-13

Overview

The DMC3035LSD-13 is a complementary pair enhancement mode MOSFET in an SOP-8L package. The N-channel device offers a drain-source voltage of 30V, continuous drain current of 6.9A at 25°C, and on-resistance of 35mΩ at 10V. The P-channel counterpart provides -30V breakdown, -5A continuous current, and 65mΩ on-resistance at -10V. Both channels feature low gate threshold voltages and fast switching speeds. The component operates within a temperature range of -55°C to +150°C and complies with AEC-Q101 standards.

Feature Summary

  • Complementary N-channel and P-channel MOSFETs integrated into a single package
  • Low static drain-source on-resistance for efficient power handling
  • Qualified to AEC-Q101 automotive reliability standards

Applications

  • DC-DC converter synchronous rectification
  • Motor control circuits
  • Power management modules

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the SOP-8L case dimensions align with the target PCB footprint requirements. Ensure the application environment remains within the specified thermal limits to maintain performance integrity.

Selection Notes

Select this component when space-constrained designs require matched N and P-channel characteristics. Verify that the required gate drive voltage supports the specified on-resistance thresholds. Consider the thermal resistance of 62.5°C/W for heat dissipation planning in the final assembly.

Part Context

This part belongs to Diodes Incorporated's complementary MOSFET portfolio designed for compact power switching applications. It utilizes a molded plastic green molding compound with matte tin terminals. The internal schematic connects the drains together, facilitating half-bridge configurations.

Replacement Considerations

Check datasheets for alternative SOP-8L complementary pairs with matching 30V ratings and similar on-resistance values. Verify pinout compatibility before substitution.

DMC3035LSD-13DMC3035LSD-13
$0.18
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