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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 0.4A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.38nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：22.6pF @ 15V
- Power - Max：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X2-DFN0806-6
- Grade：-
- Qualification：-
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Overview
The DMC31D5UDA-7B is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device in a single X2-DFN0806-6 package. The N-channel transistor provides a drain-source voltage (VDS) of 30V, with a maximum continuous drain current (ID) of 0.4A at +25°C and a static on-resistance (RDS(ON)) of 1.5Ω at VGS = 4.5V. The P-channel counterpart offers a VDS of -30V, an ID of -0.22A at +25°C, and an RDS(ON) of 5Ω at VGS = -4.5V. Total power dissipation is rated at 0.37W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration for efficient power management
- Ultra-small surface mount package measuring 0.8mm x 0.6mm
- Low on-state resistance combined with fast switching performance
- ESD protected gates with fully lead-free and RoHS compliant construction
Applications
- General purpose interfacing switches
- Power management functions
- Analog switching applications
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm packaging details, as suffixes can indicate variations in reel specifications or tape-and-reel quantities. Ensure that the component meets all applicable environmental directives, including RoHS and halogen-free requirements, before finalizing procurement specifications.
Selection Notes
Select this component when space-constrained designs require a matched N-P channel pair. Evaluate the gate threshold voltage and on-resistance curves relative to the available drive voltage. Consider the thermal resistance and power dissipation limits under expected load conditions to ensure reliable operation within the specified junction temperature range.
Part Context
This part belongs to the DMC31 series of complementary MOSFETs designed for low-voltage applications. It serves as a compact solution for replacing discrete N-channel and P-channel transistors, reducing board space and simplifying assembly processes in portable electronics and battery-powered devices.
Replacement Considerations
DMC31D5UDA-7T-13
FAQ
What is the maximum continuous drain current for the N-channel device?
The maximum continuous drain current for the N-channel device is 0.4A at an ambient temperature of +25°C.
Does the device include internal gate protection?
Yes, both the N-channel and P-channel gates are internally protected against electrostatic discharge (ESD).
What is the typical turn-on delay time for the N-channel transistor?
The typical turn-on delay time for the N-channel transistor is 3.2 ns under standard test conditions.
