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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 0.4A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：400mA (Ta), 220mA (Ta)
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.38nC @ 4.5V, 0.35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：22.6pF @ 15V, 21.8pF @ 15V
- Power - Max：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X2-DFN0806-6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC31D5UDAQ-7B is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single X2-DFN0806-6 package. The N-channel transistor features a drain-source voltage of 30V, with a maximum on-resistance of 1.5Ω at VGS=4.5V and a continuous drain current of 0.4A at +25°C. The P-channel counterpart offers a -30V breakdown voltage, a maximum on-resistance of 5Ω at VGS=-4.5V, and a continuous drain current of -0.22A at +25°C. Both channels exhibit low gate threshold voltages and fast switching speeds.
Feature Summary
- Complementary N/P-channel configuration in an ultra-small surface mount package
- Low on-state resistance for high-efficiency power management
- Very low gate threshold voltage enabling operation with low drive signals
- ESD protected gates to enhance component reliability
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch applications
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm packaging details and tape-and-reel specifications. Ensure that the required automotive qualification standards, including AEC-Q101 compliance and PPAP capability, are explicitly validated for the target application environment before procurement.
Selection Notes
Select this component when a compact dual-transistor solution is required for low-voltage switching tasks. The X2-DFN0806-6 package provides significant space savings compared to discrete components. Consider the thermal resistance characteristics and ensure adequate PCB pad layout to manage heat dissipation effectively during steady-state operation.
Part Context
This part belongs to the DMC31D5UDAQ series of complementary MOSFETs from Diodes Incorporated. It is designed specifically for applications requiring minimal footprint and efficient power handling. The product is qualified for automotive use under IATF 16949 certified manufacturing facilities, ensuring consistent quality and change control for critical systems.
Replacement Considerations
Direct substitutes must match the X2-DFN0806-6 package dimensions and electrical parameters. Verify pinout compatibility and thermal performance. Consult manufacturer cross-reference lists for confirmed equivalent parts.
