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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 0.9A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：900mA (Ta), 600mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA, 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 10V, 800pC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：38.4pF @ 15V, 19pF @ 15V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMC3350LDW-13 is a dual N-channel and P-channel MOSFET array manufactured by Diodes Incorporated. It features a breakdown voltage (BVDSS) of 30V and operates with a continuous drain current of 900mA for the N-channel and 600mA for the P-channel configuration. The device dissipates up to 350mW of power at ambient temperature. Packaged in an SOT-363 surface-mount footprint, this component integrates complementary FETs into a single compact unit suitable for low-voltage switching applications.
Feature Summary
- Integrates both N-channel and P-channel MOSFETs within a single package
- Designed for low-voltage signal and power switching operations
- Utilizes a compact SOT-363 surface-mount form factor
Applications
- Low-voltage DC-DC converter circuits
- Battery protection and management systems
- General-purpose signal switching logic
Procurement Notes
Verify the manufacturer part number against official Diodes Incorporated documentation to confirm specifications. Ensure the SOT-363 package type matches your PCB layout requirements. Confirm that the 30V rating and current limits align with your circuit design constraints before finalizing procurement.
Selection Notes
Select this component when space-constrained designs require complementary N/P-channel switching capabilities. The integrated array reduces board area compared to discrete components. Verify thermal performance under load conditions given the 350mW dissipation limit and ensure compatibility with the target voltage levels.
Part Context
This part belongs to the Diodes Incorporated FET product line, specifically categorized as a MOSFET array. It serves as a solution for applications needing paired switching elements in a minimal footprint. The designation indicates specific electrical characteristics and packaging standards defined by the manufacturer.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases or manufacturer cross-reference tools for verified alternatives.
