DMC3350LDWQ-13

Overview

The DMC3350LDWQ-13 is a dual N-channel MOSFET manufactured by Diodes Incorporated, housed in a compact SOT-363-6 surface-mount package. This silicon-based enhancement mode device features a drain-source breakdown voltage (Vds) of 50 V and a continuous drain current (Id) of 360 mA. The component exhibits a maximum on-resistance (Rds(on)) of 1.6 Ohms at a gate-source voltage of 4.5 V. It operates with a gate-source voltage range of -20 V to +20 V and includes a typical gate charge of 600 pC. The unit supports an operating temperature range from -55°C to +150°C with a power dissipation rating of 310 mW.

Feature Summary

• Dual configuration integrates two independent N-channel enhancement-mode transistors within a single six-terminal SOT-363 package for space-constrained designs.
• Optimized switching performance characterized by low gate charge and defined rise/fall times suitable for high-frequency signal processing.
• Robust thermal management capabilities allow reliable operation across extended industrial temperature ranges up to 150°C junction temperature.

Applications

• Signal switching and logic level translation in portable consumer electronics
• Load switching applications in battery-powered devices requiring low standby current
• General-purpose amplification and switching circuits in embedded systems

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the component meets required RoHS compliance standards for your target market. Ensure that the supplier provides valid traceability documentation matching the Diodes Incorporated part number to prevent counterfeit infiltration during assembly.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint SOT-363 package. The 50 V rating and 360 mA current capacity suit low-power signal switching rather than high-current power delivery. Evaluate the 1.6 Ohm on-resistance to ensure it aligns with the specific voltage drop requirements of the target circuit application.

Part Context

This part belongs to the DMN/DMC series of dual MOSFETs from Diodes Incorporated, designed for compact surface-mount applications. The 'Q' suffix typically indicates automotive-grade qualification or specific reliability enhancements compared to standard commercial variants. It serves as a complementary solution to single-channel counterparts where board space is limited.

Replacement Considerations

Direct replacements must match the SOT-363-6 package, 50 V Vds, and dual N-channel topology. Verify pinout compatibility and Rds(on) characteristics to ensure equivalent electrical performance without redesigning the PCB layout.