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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 0.8A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta), 550mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA, 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V, 800pC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V, 19pF @ 15V
- Power - Max：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMC3401LDW-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single SOT-363 package. The N-channel transistor provides a drain-source breakdown voltage of 30V, with a maximum continuous drain current of 0.8A at VGS = 10V and 0.62A at VGS = 4.5V. Its static drain-source on-resistance is specified as 0.4Ω max at VGS = 10V and 0.7Ω max at VGS = 4.5V. The P-channel counterpart features a -30V breakdown voltage, supporting a maximum continuous drain current of -0.55A at VGS = -10V and -0.4A at VGS = -4.5V.
Feature Summary
- Complementary N/P-channel configuration in a compact SOT-363 package
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- Motor control circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the component against the official datasheet DS41190 Rev. 6 to confirm authenticity. Ensure the ordering suffix matches the required packing quantity, specifically noting that the -13 suffix corresponds to a tape and reel carrier containing 10,000 units. Confirm compliance with RoHS directives and check for specific automotive qualification requirements if applicable to the design.
Selection Notes
Select this component when a matched N/P-channel pair is required for synchronous rectification or load switching applications. Evaluate the thermal resistance characteristics based on the PCB copper area, as the junction-to-ambient thermal resistance varies significantly between minimum pad layouts and larger copper plates. Consider the gate threshold voltage ranges to ensure compatibility with the intended logic drive levels.
Part Context
This part belongs to the DMC3401 series of complementary MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a lead-free SOT-363 package utilizing a molded plastic compound classified as UL 94V-0 flammability rating.
Replacement Considerations
Direct substitutes include other dual complementary MOSFETs in SOT-363 packages with similar voltage and current ratings. Verify pinout compatibility and electrical parameters such as RDS(ON) and BVDSS before substitution.
