DMC3401LDW-7

$0.30

Description：MOSFET N/P-CH 30V 0.8A SOT363
Series：-

SKU:7f451b225ba1 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 0.8A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：800mA (Ta), 550mA (Ta)
Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id：1.6V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V, 800pC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V, 19pF @ 15V
Power - Max：290mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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DMC3401LDW-7

Overview

The DMC3401LDW-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single SOT363 package. The N-channel transistor provides a drain-source breakdown voltage of 30V with a maximum continuous drain current of 0.8A at 25°C, while the P-channel counterpart offers -30V breakdown and -0.55A current capability. Both channels feature low on-state resistance to minimize conduction losses. The component operates across a temperature range of -55°C to +150°C and includes ESD protection diodes on both gates.

Feature Summary

Complementary N/P-channel configuration in a compact SOT363 package
Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
Integrated gate protection against electrostatic discharge

Applications

Motor control circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel carrier format when sourcing components. Confirm that the requested part matches the exact document number DS41190 Rev. 6 - 2 to ensure compliance with the latest electrical specifications and mechanical data provided by the manufacturer.

Selection Notes

Select this component for applications requiring a matched N/P-channel pair in space-constrained designs. Ensure the gate drive voltage meets the minimum requirements for the desired on-resistance levels. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient operating conditions to maintain junction temperatures within safe limits.

Part Context

This part belongs to the DMC3401 series of complementary MOSFETs from Diodes Incorporated. The 'LDW' designation indicates the specific pinout and package type (SOT363), while the suffix '-7' specifies the standard 3000-piece tape and reel packaging quantity used for automated surface-mount assembly processes.

Replacement Considerations

DMC3401LDW-13

FAQ

What are the typical on-resistance values for the N-channel and P-channel?

For the N-channel, RDS(ON) is typically 0.2Ω at VGS=10V and 0.3Ω at VGS=4.5V. For the P-channel, it is typically 0.5Ω at VGS=-10V and 0.78Ω at VGS=-4.5V.