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Product Detailed Parameters
- Description：MOSFET N/P-CH 25V 0.68A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：680mA (Ta), 460mA (Ta)
- Rds On (Max) @ Id, Vgs：450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.64nC @ 4.5V, 1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V, 63pF @ 10V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3730UVT-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, integrating an N-channel and a P-channel device within a single TSOT26 package. The N-channel transistor (Q1) features a drain-source voltage of 25V, a maximum continuous drain current of 0.68A at 25°C, and a typical on-resistance of 0.45Ω at VGS = 4.5V. The P-channel transistor (Q2) offers a -25V breakdown voltage, a maximum continuous drain current of -0.46A, and a typical on-resistance of 1.1Ω at VGS = -4.5V. Both devices are rated for a total power dissipation of 0.7W to 0.9W depending on board conditions, with an operating temperature range spanning from -55°C to +175°C.
Feature Summary
- Complementary N-channel and P-channel configuration in a compact TSOT26 package
- Optimized low on-state resistance for high efficiency power management
- Fast switching speed supported by low input capacitance and gate charge
- Integrated ESD protection diodes on both gate terminals
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS39886 Rev. 2-2 to confirm electrical parameters and physical dimensions. Ensure that the ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 10,000 units. Confirm RoHS compliance and AEC-Q101 qualification status as specified in the manufacturer's documentation before finalizing procurement specifications.
Selection Notes
Select this component when space-constrained designs require a matched N-channel and P-channel MOSFET pair. The TSOT26 package provides a small footprint suitable for portable electronics. Evaluate the thermal resistance characteristics based on the specific PCB copper area available for heat dissipation. Consider the gate threshold voltages to ensure compatibility with the intended logic drive levels for efficient switching operation.
Part Context
This part belongs to the DMC3730 series of complementary MOSFETs manufactured by Diodes Incorporated. It is designed specifically for applications demanding high efficiency and minimal conduction losses. The integration of both channel types into one package simplifies layout and reduces the overall component count compared to using discrete transistors.
Replacement Considerations
Direct replacements must match the TSOT26 package and provide similar 25V ratings for both channels. Verify that any substitute component maintains comparable on-resistance values and switching speeds to ensure circuit performance remains unchanged.
