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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 7.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1790pF @ 20V
- Power - Max：17.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC4040SSDQ-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, housed in an SO-8 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 offers a drain-source voltage of 40V with on-resistance of 25mΩ at VGS=10V and 40mΩ at VGS=4.5V, supporting continuous currents up to 7.5A. Q2 provides -40V breakdown with matching on-resistance characteristics. The component operates within a temperature range of -55°C to +150°C and features low gate charge for fast switching.
Feature Summary
- Complementary N-Channel and P-Channel FETs matched for minimized bridge arm losses
- Optimized for high-efficiency switching applications
- Totally lead-free and fully RoHS compliant construction
Applications
- 3-phase brushless DC motor circuits (BLDC)
- CCFL backlighting systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the AEC-Q101 qualification status meets automotive supply chain requirements before finalizing procurement orders.
Selection Notes
Select this component when space-constrained designs require dual MOSFET functionality in a single surface-mount footprint. Ensure the application logic levels align with the specified gate threshold voltages and that thermal management accommodates the power dissipation limits under steady-state conditions.
Part Context
This part belongs to the DMC4040SSDQ series of complementary MOSFET pairs manufactured by Diodes Incorporated. It shares the SO-8 mechanical outline with other devices in the family but is distinguished by its specific electrical matching parameters designed for balanced load distribution in bridge configurations.
Replacement Considerations
DMC4050SSDQ-13
FAQ
How are the N-channel and P-channel on-resistances matched?
The device is specifically designed so that the RDS(ON) of the N-channel and P-channel FETs are matched to minimize losses in both arms of the bridge circuit.
What is the maximum continuous drain current for the N-channel device?
The maximum continuous drain current for the N-channel device (Q1) is 7.5A at VGS = 10V.
Is this component suitable for automotive applications?
Yes, the DMC4040SSDQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities for automotive use.
