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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 5.1A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5.1A (Ta)
- Rds On (Max) @ Id, Vgs：40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.8nC @ 10V, 19.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1130pF @ 15V, 1030pF @ 30V
- Power - Max：1.24W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC6040SSDQ-13 is a complementary pair enhancement mode MOSFET designed for automotive applications. It integrates an N-channel Q1 and a P-channel Q2 in an SO-8 package. The N-channel device offers a drain-source voltage of 60V, with on-resistance of 40mΩ at VGS=10V/ID=8A and 55mΩ at VGS=4.5V/ID=5A. Continuous drain current reaches 5.1A at 25°C. The P-channel device features -60V BVDSS, with on-resistance of 110mΩ at VGS=-10V/-4.5A and 130mΩ at VGS=-4.5V/-3.5A. Total power dissipation is 1.24W at 25°C.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability
- PPAP capable for automotive supply chain requirements
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific suffix 'Q' indicates AEC-Q101 qualification and PPAP capability when sourcing. Confirm the manufacturer is Diodes Incorporated. Ensure the package matches the SO-8 outline dimensions provided in the datasheet. Check for compliance with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2). Validate that the component meets halogen and antimony-free definitions.
Selection Notes
Select this component for automotive circuits requiring a matched N/P channel pair. Verify thermal resistance values based on PCB copper area, as steady-state RθJA varies between 101°C/W and 80°C/W depending on layout. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance. Consider the maximum junction temperature rating of +150°C for high-temperature environments.
Part Context
This part belongs to the DMC6040 series of complementary MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards. The 'SSDQ' designation identifies the SO-8 surface mount package with automotive qualification. It serves as a compact solution for driving loads in power management systems where space and efficiency are critical constraints.
Replacement Considerations
DMC6040SSD-13
FAQ
What is the difference between DMC6040SSDQ-13 and DMC6040SSD-13?
The DMC6040SSDQ-13 is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for automotive applications. The standard version lacks these specific automotive qualifications.
What is the maximum continuous drain current for the N-channel device?
The maximum continuous drain current for the N-channel device is 5.1A at an ambient temperature of +25°C and 4.1A at +70°C.
How does the on-resistance vary with gate voltage?
For the N-channel device, RDS(ON) is 40mΩ max at VGS=10V and 55mΩ max at VGS=4.5V. For the P-channel device, it is 110mΩ max at VGS=-10V and 130mΩ max at VGS=-4.5V.
