DMC6070LFDH-7

Description：MOSFET N/P-CH 60V 3.1A 8VDFN
Series：-

SKU:7a8db4755c14 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 3.1A 8VDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.1A, 2.4A
Rds On (Max) @ Id, Vgs：85mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：731pF @ 20V
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-VDFN
Supplier Device Package：V-DFN3030-8
Grade：-
Qualification：-

Download product information

DMC6070LFDH-7

Overview

The DMC6070LFDH-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device in a V-DFN3030-8 package. The N-channel transistor (Q1) supports a drain-source voltage of 60V with a maximum on-resistance of 85 mΩ at VGS=10V and a continuous drain current of 3.1A. The P-channel transistor (Q2) handles -60V with an on-resistance of 150 mΩ at VGS=-10V and a continuous drain current of -2.4A. Total power dissipation is rated at 1.4W, operating within a temperature range of -55°C to +150°C.

Feature Summary

Complementary N/P-channel configuration for high-efficiency power management
Low input capacitance and fast switching speed
Totally lead-free and fully RoHS compliant
Qualified to AEC-Q101 standards for high reliability

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS36083 Rev. 7. Confirm the marking code C60 matches the part number. Ensure the package is V-DFN3030-8. Check that the device meets AEC-Q101 requirements if automotive applications are intended. Note that this component is marked as not recommended for new design.

Selection Notes

Select this component when a matched N/P pair is required for synchronous rectification or bridge circuits. The low on-resistance minimizes conduction losses. Verify thermal constraints, as the total power dissipation is limited to 1.4W. Consider the small V-DFN3030-8 footprint for space-constrained designs. Ensure gate drive voltages align with the specified thresholds for optimal performance.

Part Context

This device belongs to the DMC6070 series of complementary MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is housed in a POWERDI case, which is a registered trademark of Diodes Incorporated. The series targets high efficiency in power management applications.