DMC62D0SVQ-7

Overview

The DMC62D0SVQ-7 is a dual N-channel and P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-563-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 50 V for the N-channel and 60 V for the P-channel. Continuous drain current (Id) ratings are 304 mA for the N-channel and 571 mA for the P-channel. On-resistance (Rds(on)) values are 1.7 Ohms and 6 Ohms, respectively. Gate-source voltage (Vgs) limits are ±20 V, with threshold voltages (Vgs(th)) ranging from 1 V to 2.5 V. Gate charge (Qg) is specified at 400 pC for the N-channel and 300 pC for the P-channel. Power dissipation (Pd) is 840 mW, and the operating temperature range spans from -55°C to +150°C. The component holds AEC-Q101 qualification.

Feature Summary

• Dual configuration integrating both N-channel and P-channel transistors within a single compact SOT-563-6 package.
• Automotive-grade reliability certified under the AEC-Q101 standard for automotive applications.
• Enhancement mode operation designed for efficient switching performance in low-voltage environments.

Applications

• Automotive electronic systems requiring qualified semiconductor components.
• Low-voltage signal switching circuits utilizing dual channel configurations.
• Portable devices and battery-powered equipment benefiting from small form factor packaging.

Procurement Notes

Verify the specific part number DMC62D0SVQ-7 against official Diodes Incorporated documentation to confirm exact electrical parameters and package details. Ensure compliance with RoHS directives and AEC-Q101 automotive standards as stated in the manufacturer's datasheet. Cross-reference ordering suffixes to confirm reel or cut tape availability matches project requirements without assuming stock levels.

Selection Notes

Select this component when a dual N/P-channel MOSFET solution is required in an SOT-563-6 footprint. Consider the 50 V/60 V breakdown voltage and specific on-resistance values for N and P channels during circuit design. Verify that the 840 mW power dissipation rating and -55°C to +150°C temperature range suit the thermal environment. Confirm AEC-Q101 qualification is necessary for the target application.

Part Context

This component belongs to the Diodes Incorporated MOSFET product line, specifically categorized under dual transistors. It is part of the broader family of silicon-based enhancement mode field-effect transistors designed for surface-mount assembly. The SOT-563-6 package allows for space-constrained designs while providing independent control over two distinct channel types.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Ensure any replacement maintains the SOT-563-6 package, dual N/P-channel configuration, and AEC-Q101 qualification if automotive use is intended.