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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V/20V 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V, 20V
- Current - Continuous Drain (Id) @ 25°C：390mA (Ta), 2.9A (Ta)
- Rds On (Max) @ Id, Vgs：4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA, 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4nC @ 4.5V, 7.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 25V, 443pF @ 16V
- Power - Max：580mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC67D8UFDBQ is a complementary pair enhancement mode MOSFET designed for automotive applications. It integrates an N-Channel and a P-Channel device in a U-DFN2020-6 Type B package with a maximum height of 0.6mm. The N-Channel transistor features a 60V drain-source voltage (BVDSS) and a typical on-resistance of 4.0Ω at VGS=10V. The P-Channel transistor offers a -20V BVDSS with a typical on-resistance of 72mΩ at VGS=-4.5V. Qualified to AEC-Q101 standards, the component supports continuous drain currents of 0.39A for the N-Channel and -2.9A for the P-Channel.
Feature Summary
- Low on-resistance characteristics for both N-Channel and P-Channel transistors
- Low input capacitance to support efficient switching operations
- ESD protected gate structure for enhanced reliability
- Qualified to AEC-Q101 standards with PPAP capability
Applications
- Load switch circuits
- Automotive electronic systems
- Power management modules
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates packaging in reels of 3000 units, while '-13' denotes reels of 10,000 units. Confirm that the required quantity aligns with these standard reel sizes before placing orders to ensure proper handling and storage conditions are maintained throughout the supply chain.
Selection Notes
Select this component for designs requiring a compact complementary MOSFET pair within strict automotive reliability frameworks. The low profile package suits space-constrained PCB layouts. Ensure gate drive voltages match the specified thresholds for optimal on-resistance performance. Verify thermal dissipation requirements against the junction-to-ambient resistance values provided in the datasheet for steady-state operation.
Part Context
This part belongs to Diodes Incorporated's portfolio of automotive-grade discrete semiconductors. It complements other single-channel MOSFETs by providing integrated complementary functionality in a minimal footprint. The U-DFN2020-6 package is commonly used in portable and automotive electronics where board space is limited but high reliability is mandatory.
Replacement Considerations
Direct replacements must match the U-DFN2020-6 Type B package dimensions and pinout configuration. Verify that substitute components meet or exceed the AEC-Q101 qualification level and maintain similar electrical parameters for both N-Channel and P-Channel devices to ensure circuit compatibility.
