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DME2957-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.
RF Diode specifications for DME2957-000
- Description：RF DIODE SCHOTTKY 75MW
- Series：DME
- Mfr：Skyworks Solutions Inc.
- Package：Tray
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：-
- Current - Max：100 mA
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：75 mW
- Operating Temperature：-65°C ~ 175°C (TA)
- Package / Case：2-SMD, Flat Leads
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for DME2957-000
RF Diode Overview
The DME2957-000 is a silicon beam-lead Schottky barrier mixer diode designed for applications through 40 GHz. It operates in the X-band frequency range of 8.2 to 12.4 GHz. The device features a medium drive level with a junction capacitance (CJ) ranging from 0.15 to 0.30 pF at 0 V and 1 MHz. Series resistance (RS) is specified between 8 Ω minimum and 5 Ω maximum at 5 mA. The breakdown voltage (VB) is 3 V at 10 μA, and forward voltage (VF) ranges from 325 to 425 mV at 1 mA. Absolute maximum ratings include a continuous wave power dissipation of 75 mW per junction and an operating temperature range from -65 °C to +175 °C.
RF Diode Feature Summary
- Beam-lead design facilitates bonding to small area low capacitance junctions
- Low intermodulation distortion characteristics
- Statistical Process Control wafer fabrication
RF Diode Applications
- Microwave Integrated Circuits
- Mixers
- Detectors
RF Diode Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Skyworks Solutions documentation. Confirm that the specific ordering suffix matches the required electrical parameters and package configuration. Ensure compliance with applicable environmental regulations before procurement.
RF Diode Selection Notes
Select this component based on the required X-band frequency operation and medium local oscillator drive requirements. Evaluate the junction capacitance and series resistance specifications against circuit impedance matching needs. Verify that the absolute maximum ratings align with the intended operating conditions.
RF Diode Part Context
This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series includes singles, pairs, and quads categorized into S, C, X, Ku, K, and Ka bands. The DME designation specifically indicates a medium drive level device within this family.
RF Diode Replacement Considerations
Compatible substitutes within the same series include the DMF2821-000 for low drive and the DMJ2777-000 for high drive applications in the X-band. These alternatives share identical outline drawings and beam-lead configurations.
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