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The DME800 is a high-power common base bipolar transistor designed for pulsed avionics applications within the 1025 to 1150 MHz frequency band. It delivers an output power of 800 Watts at a voltage rating of 50 Volts. The device features gold thin-film metallization to ensure high mean time to failure (MTTF). Integrated input and output prematch provides broadband capability, while its low thermal resistance package reduces junction temperature to extend operational life.
Verify the manufacturer designation carefully, as listings may attribute this component to GHz Technology or Unclassified Manufacturers rather than Microsemi Corporation. Confirm the specific datasheet version matches the required 1025-1150 MHz operational parameters. Ensure the unit is intended for pulsed operation only, as continuous wave ratings differ significantly from the specified 800W pulsed output.
Select this component when designing pulsed RF systems requiring high power density in the L-band avionics spectrum. The integrated prematching simplifies impedance matching networks, reducing external component count. Consider the thermal management requirements dictated by the common base configuration and the need for robust heat sinking to maintain junction temperatures within safe limits during high-duty cycle pulses.
This transistor belongs to a family of high-power devices optimized for airborne radar and communication systems. It serves as a critical gain stage in pulsed transmitters where reliability and power efficiency are paramount. The design focuses on minimizing parasitic effects through internal prematching, allowing for stable performance across the designated microwave frequency range without complex external tuning circuits.
Public confirmed substitute part numbers: DME500, DME375A, DME150.