RF Diode DMF2077-000 product image

DMF2077-000

$7.99
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DMF

SKU:4f43ae0a4c0f Category: Brand:

  
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DMF2077-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DMF2077-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DMF
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - 1 Bridge
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DMF2077-000

DMF2077-000

RF Diode Overview

The DMF2077-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DME, DMF, and DMJ series. Designed for applications through 40 GHz, it operates in the X-band (8.2 to 12.4 GHz). The device features a bridge quad configuration with four junctions. Electrical specifications include a maximum capacitance of 0.30 pF at 0 V and 1 MHz, a typical series resistance of 8 Ω at 5 mA, a breakdown voltage of 2 V at 10 μA, and a forward voltage range of 220 to 300 mV at 1 mA. It supports low local oscillator drive levels.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges associated with small low-capacitance junction areas.
  • Utilizes epitaxial silicon substrate deposition to achieve low series resistance and narrow capacitance spread for precise impedance control.
  • Statistical Process Control wafer fabrication ensures uniformity suitable for balanced mixer topologies.

RF Diode Applications

  • Microwave Integrated Circuits
  • X-Band Mixers
  • Detectors

RF Diode Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet documentation. Confirm that the received parts match the specified beam-lead package outline drawing number 488-004. Ensure handling procedures strictly adhere to industry-standard electrostatic discharge precautions to prevent damage during installation.

RF Diode Selection Notes

Select this part when designing X-band circuits requiring a low-drive bridge quad Schottky mixer. Verify that the system local oscillator power aligns with the low drive level characteristics defined by the forward voltage parameters. Ensure the layout accommodates the specific beam-lead terminal geometry outlined in the mechanical specifications.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes manufactured by Skyworks Solutions, Inc. The series covers frequency ranges from S-band through Ka-band, categorized by drive levels and circuit configurations including singles, pairs, common cathodes, anti-parallel pairs, ring quads, and bridge quads.

RF Diode Replacement Considerations

Other devices within the DME, DMF, and DMJ series may serve as alternatives if they share the same bridge quad configuration and X-band frequency range. Verify that substitute components maintain compatible electrical parameters, specifically capacitance, series resistance, and forward voltage, to ensure circuit performance consistency.

RF Diode FAQ

What is the operating frequency band for the DMF2077-000?

The DMF2077-000 is designed for the X-band, which spans from 8.2 to 12.4 GHz.

How many junctions are contained in the DMF2077-000 package?

The DMF2077-000 is a bridge quad configuration containing four junctions.

What is the maximum capacitance specification for this device?

The maximum capacitance is 0.30 pF, measured at 0 V and 1 MHz.

DMF2077-000DMF2077-000
$7.99
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