DMF2820-000

RF Diode Overview

The DMF2820-000 is a silicon beam-lead Schottky barrier mixer diode manufactured by Skyworks Solutions Inc. It is designed for microwave integrated circuits operating in the S and C frequency bands (2 to 8 GHz). The device features a low drive level configuration with a junction capacitance of 0.30 to 0.50 pF at 0 V, 1 MHz, and a series resistance of 5 Ω at 5 mA. Electrical specifications include a breakdown voltage of 2 V at 10 μA and a forward voltage range of 200 to 260 mV at 1 mA. Absolute maximum ratings specify a continuous wave power dissipation of 75 mW per junction and a maximum current of 100 mA.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with small junction areas characteristic of low capacitance devices.
• Statistical process control wafer fabrication ensures narrow spread of capacitance values for close impedance control.
• Low series resistance combined with uniformity makes the device well-suited for balanced mixer applications.

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Mixers
• Detectors

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific lot traceability requirements before procurement. Ensure storage conditions adhere to specified temperature ranges to maintain device reliability.

RF Diode Selection Notes

Select this part for S and C band applications requiring low local oscillator drive levels. Compare against DME and DMJ series variants if medium or high drive levels are necessary. Verify that the 0.30 to 0.50 pF capacitance range aligns with the target circuit's impedance matching network.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers single, pair, common cathode, anti-parallel, ring quad, and bridge quad configurations across S, C, X, Ku, K, and Ka bands. The DMF designation specifically indicates an N-type low drive device.

RF Diode Replacement Considerations

DME2127-000 offers medium drive characteristics within the same S/C band footprint. DMJ2823-000 provides high drive options for similar frequency ranges. Cross-reference package outline 491-011 dimensions when evaluating physical compatibility.

RF Diode FAQ

What is the maximum continuous wave power dissipation?

The absolute maximum rating for continuous wave power dissipation is 75 mW per junction.

Which frequency bands does the DMF2820-000 support?

The device is categorized for use in S-band (2 to 4 GHz) and C-band (4 to 8 GHz).

How is the beam-lead design beneficial for this component?

The beam-lead design eliminates bonding difficulties to the very small junction area typical of low capacitance microwave devices.