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DMG1012T-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 630MA SOT-523. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG1012T-7
- Description：MOSFET N-CH 20V 630MA SOT-523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：630mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.74 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：60.67 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：280mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Single FETs, MOSFETs datasheet and documents for DMG1012T-7
Single FETs, MOSFETs Overview
The DMG1012T-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20 V and a continuous drain current of 0.63 A at +25°C. The device exhibits a typical static drain-source on-resistance of 0.3 Ω at VGS = 4.5V and ID = 600mA, with a gate threshold voltage ranging from 0.5 V to 1.0 V. Packaged in a SOT523 surface-mount housing, it includes internal ESD protection rated up to 2 kV.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode architecture
- Integrated electrostatic discharge protection
- Totally lead-free and fully RoHS compliant construction
Single FETs, MOSFETs Applications
- Battery-powered portable devices
- Power management circuits
- General-purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage switching tasks requiring minimal footprint. Evaluate thermal resistance and power dissipation limits relative to the intended operating temperature range. Ensure gate drive voltages remain within specified thresholds to maintain optimal on-resistance performance.
Single FETs, MOSFETs Part Context
This part belongs to the DMG1012T series of small-signal MOSFETs designed for compact electronic systems. It utilizes a SOT523 package to provide efficient heat dissipation within restricted board areas while maintaining reliable electrical characteristics across varying ambient temperatures.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pin configurations and electrical ratings when evaluating potential replacement components.
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