DMG1012UW-7

Single FETs, MOSFETs Overview

The DMG1012UW-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT323 surface-mount package. It features a drain-source voltage (BVDSS) of 20 V and a continuous drain current (ID) of 1.0 A at +25°C, with a pulsed drain current capability of 6 A. The device exhibits low on-resistance, ranging from 0.3 Ω to 0.75 Ω depending on gate drive conditions. Key electrical parameters include a gate threshold voltage between 0.5 V and 1.0 V, total gate charge of 736.6 pC, and input capacitance of 60.67 pF. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Low on-resistance for efficient power handling
• Fast switching speed with low input/output leakage
• ESD protection rated up to 2kV
• Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

• Battery management systems
• Power management circuits
• General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets the required environmental standards, specifically ensuring compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with a 20 V rating and 1 A continuous current capacity is required. Consider the SOT323 package for space-constrained designs. Evaluate the thermal resistance of 425 °C/W and power dissipation limits against the expected operating environment. Verify that the gate threshold voltage range aligns with the available logic levels in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the DMG1012UW series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated under the DiodesZetex brand. It utilizes silicon technology and is designed for surface mount applications. The device is classified as a single-channel transistor intended for use in various electronic circuits requiring reliable switching performance within a small form factor.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly confirmed in the provided documentation. When evaluating alternatives, ensure compatibility regarding the SOT323 package dimensions, 20 V drain-source voltage rating, and 1 A continuous drain current specifications. Verify that any replacement maintains similar on-resistance and gate threshold characteristics.