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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.03A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.03A (Ta)
- Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.622nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：59pF @ 16V
- Power - Max：530mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMG1023UVQ-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -1.03 A at +25°C. The device exhibits a typical static drain-source on-resistance (R_DS(on)) of 0.75 Ω at V_GS = -4.5 V and 1.05 Ω at V_GS = -2.5 V. Total gate charge (Q_g) is typically 622 pC, with input capacitance (C_iss) of 59 pF. Maximum power dissipation is 0.53 W, and the junction temperature range spans from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration in a compact SOT563 package
- Optimized for low on-state resistance while maintaining fast switching performance
- ESD protected gate structure
- AEC-Q101 qualified for automotive applications
Applications
- DC-DC converters
- Load switch circuits
- Power management functions
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS41660 Rev. 5-2 to confirm authenticity. Ensure the marking code matches the specified date code key and product type. Check for compliance with RoHS 3 and halogen-free requirements as defined by the manufacturer. Confirm that the packaging corresponds to the ordered quantity, such as 3,000 units per tape and reel.
Selection Notes
Select this component when a dual P-channel solution is required within a small footprint. Evaluate the R_DS(on) specifications at the intended operating gate voltage to ensure efficiency targets are met. Consider the thermal resistance and power dissipation limits relative to the PCB layout and ambient temperature conditions during operation.
Part Context
This part belongs to the DMG1023UVQ series of dual P-channel MOSFETs. It shares the same electrical characteristics and package outline as the standard DMG1023UVQ but is specifically packaged for automated surface-mount assembly. The 'Q' suffix indicates AEC-Q101 qualification and PPAP capability for automotive supply chains.
Replacement Considerations
Direct replacements must match the SOT563 package and dual P-channel topology. Verify that substitute components meet or exceed the -20 V breakdown voltage and -1.03 A current rating. Ensure the replacement offers comparable R_DS(on) and gate charge values to maintain circuit timing and efficiency.
FAQ
What is the maximum gate-source voltage allowed?
The absolute maximum rating for the gate-source voltage (V_GSS) is ±6 V.
Is this component suitable for high-temperature environments?
Yes, the device supports an operating and storage temperature range from -55°C to +150°C.
How is the gate protected against electrostatic discharge?
The device includes an ESD protected gate structure to safeguard against static damage.
