DMG1026UVQ-7

$0.45

Description：MOSFET 2N-CH 60V 0.44A SOT563
Series：-

SKU:34b231e12772 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.44A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：440mA (Ta)
Rds On (Max) @ Id, Vgs：1.8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：32pF @ 25V
Power - Max：650mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：Automotive
Qualification：AEC-Q101

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DMG1026UVQ-7

Overview

The DMG1026UVQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 440mA at +25°C. The device offers a low on-state resistance of 1.8Ω at VGS=10V and 2.1Ω at VGS=4.5V. Packaged in an SOT-563-6 surface-mount configuration, it supports a power dissipation of 580mW and operates within a temperature range of -55°C to +150°C. The component is AEC-Q101 qualified for automotive applications.

Feature Summary

Dual N-channel configuration designed for high efficiency power management
AEC-Q101 qualified with PPAP capability for automotive use
Totally lead-free and fully RoHS compliant construction

Applications

Battery operated systems
Solid-state relays
DC-DC converters
Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging quantity of 3,000 units. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET with a 60V rating is required in a compact SOT-563 package. Ensure the application gate drive voltage aligns with the specified RDS(ON) characteristics at either 4.5V or 10V. Verify thermal constraints against the 213°C/W junction-to-ambient resistance for steady-state operation.

Part Context

This part belongs to the DMG1026UVQ series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to minimize on-state resistance while maintaining superior switching performance for efficient power management solutions.

Replacement Considerations

The datasheet explicitly marks this component as 'NOT RECOMMENDED FOR NEW DESIGN'. Engineers should consult the manufacturer's official documentation for current recommended alternatives suitable for new product development.

FAQ

Is the DMG1026UVQ-7 suitable for automotive applications?

Yes, the DMG1026UVQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, making it suitable for automotive applications requiring specific change control.