DMG1029SV-7

$0.45

Description：MOSFET N/P-CH 60V 0.5A SOT563
Series：-

SKU:3bd64c414bb0 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 0.5A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：500mA, 360mA
Rds On (Max) @ Id, Vgs：1.7Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：30pF @ 25V, 25pF @ 25V
Power - Max：450mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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DMG1029SV-7

Overview

The DMG1029SV-7 is a complementary pair enhancement mode MOSFET in an SOT563 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 offers a maximum drain-source voltage of 60V, with on-resistance values of 1.7Ω at VGS=10V and 3Ω at VGS=4.5V. Q2 provides -60V breakdown, with on-resistance values of 4Ω at VGS=-10V and 6Ω at VGS=-4.5V. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration for efficient power management
Low on-state resistance combined with fast switching performance
Ultra-small surface mount package suitable for space-constrained designs
Qualified to AEC-Q101 standards for high reliability applications

Applications

General purpose interfacing switch
Power management functions
Analog switch

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version uses the '-7' suffix, while the automotive qualified version utilizes the 'Q-7' suffix. Confirm that the required part matches the intended application grade before procurement.

Selection Notes

Select this component for low-voltage switching tasks requiring minimal footprint. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance. Verify thermal dissipation requirements against the junction-to-ambient resistance limits provided in the datasheet.

Part Context

This device belongs to the DMG1029 series of complementary MOSFETs manufactured by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for high-efficiency power management applications.

Replacement Considerations

The DMG1029SVQ-7 serves as the automotive-grade equivalent. Both parts share identical electrical and thermal characteristics, differing only in qualification standards.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.