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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 0.5A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta), 360mA (Ta)
- Rds On (Max) @ Id, Vgs：1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA, 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.3nC @ 4.5V, 0.28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：30pF @ 25V, 25pF @ 25V
- Power - Max：450mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMG1029SVQ-7 is a complementary pair enhancement mode MOSFET in an SOT563 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a 60V drain-source voltage, 500mA continuous drain current at +25°C, and a maximum on-resistance of 1.7Ω at VGS=10V. Q2 offers -60V breakdown, -360mA continuous drain current, and a maximum on-resistance of 4Ω at VGS=-10V. The component operates within a junction temperature range of -55°C to +150°C and supports a total power dissipation of 1W under specific thermal conditions.
Feature Summary
- AEC-Q101 qualified for automotive applications with PPAP capability
- Ultra-small surface mount SOT563 package design
- Low gate threshold voltage and low input capacitance
- Fast switching speed characteristics
Applications
- General-purpose interfacing switches
- Power management functions
- Analog switches
Procurement Notes
Verify the part number suffix against official Diodes Incorporated documentation to confirm compliance status. Ensure that the ordering information matches the required automotive qualification level and packaging specifications before finalizing procurement orders.
Selection Notes
Select this component when a compact dual MOSFET solution is required for automotive-grade logic-level switching. Evaluate the thermal resistance values relative to the PCB copper area to ensure the power dissipation limits are not exceeded during operation.
Part Context
This device belongs to the DMG1029SVQ family of complementary MOSFETs manufactured by Diodes Incorporated. It is designed specifically for space-constrained applications requiring both N-channel and P-channel switching capabilities within a single surface-mount footprint.
Replacement Considerations
Consult official manufacturer cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on pinout or voltage ratings without verifying electrical parameters and package dimensions.
