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DMG2302UK-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 2.8A SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG2302UK-7
- Description：MOSFET N-CH 20V 2.8A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：130 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：660mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG2302UK-7
Single FETs, MOSFETs Overview
The DMG2302UK-7 is an N-channel enhancement mode MOSFET in a SOT-23 package. It features a drain-source voltage of 20V and a continuous drain current of 2.8A at +25°C. The maximum on-resistance is 90mΩ at VGS=4.5V and 120mΩ at VGS=2.5V. Total power dissipation is 0.66W on FR-4 with minimum pads, or 1.1W on high-copper boards. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for efficient power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Qualified to AEC-Q101 automotive standards
Single FETs, MOSFETs Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix '-7' indicates tape and reel packaging containing 3,000 units per reel. Confirm that the component meets RoHS and halogen-free requirements as specified by Diodes Incorporated. Ensure the ordering part number matches the exact electrical characteristics required for the target application design.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance is needed for space-constrained designs. Consider the thermal resistance values based on the PCB copper coverage. Verify that the gate drive voltage aligns with the specified thresholds for optimal performance and switching efficiency.
Single FETs, MOSFETs Part Context
This device belongs to the DMG2302UK series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a molded plastic case material classified as UL 94V-0 flammability rating. The terminals are matte tin annealed over a copper leadframe, ensuring solderability per MIL-STD-208 standards.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative N-channel MOSFETs with similar 20V ratings and comparable RDS(ON) values. Ensure any substitute maintains the SOT-23 footprint and AEC-Q101 qualification if automotive reliability is required. Verify pinout compatibility before implementation.
Single FETs, MOSFETs FAQ
What is the maximum gate-source voltage allowed?
The absolute maximum rating for gate-source voltage (VGSS) is ±12V.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises, as shown in the typical on-resistance vs. junction temperature graphs in the datasheet.
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