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DMG2305UX-EV is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists EVVO. Its product description is MOSFET P-CH 20V 4.2A SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG2305UX-EV
- Description：MOSFET P-CH 20V 4.2A SOT23
- Series：-
- Mfr：EVVO
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：35mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：886.6 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG2305UX-EV
Single FETs, MOSFETs Overview
The DMG2305UX-EV is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated under the EVVO series. It features a maximum drain-source voltage of 20 V and a continuous drain current of 4.2 A at case temperature. The device offers low on-state resistance to minimize conduction losses while maintaining superior switching performance. Key electrical parameters include a gate charge of 10 nC, a maximum gate-source voltage of ±8 V, and drive voltages of 1.8 V and 4.5 V for optimized RDS(on). It is housed in a surface-mount SOT-23 package with a power dissipation rating of 1.4 W.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance
- Optimized for high efficiency power management applications
- Surface-mount SOT-23 package suitable for space-constrained designs
Single FETs, MOSFETs Applications
- High efficiency power management circuits
- Battery protection modules
- Load switch applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with standard SOT-23 footprints during PCB layout. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low voltage operation and compact packaging. Evaluate thermal constraints as the power dissipation rating is limited to 1.4 W at case temperature. Confirm that the required gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance.
Single FETs, MOSFETs Part Context
This part belongs to the EVVO series from Diodes Incorporated, focusing on efficient power solutions. The DMG2305UX variant is a P-channel MOSFET designed for modern portable electronics where size and efficiency are critical. It serves as a discrete solution for load switching and power control tasks.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes such as the DMG2305UX-7 or DMG2305UX-13 from Diodes Incorporated, which share identical electrical characteristics but may differ in packaging quantity or reel specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
