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DMG2307L-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 30V 2.5A SOT-23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG2307L-7
- Description：MOSFET P-CH 30V 2.5A SOT-23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：371.3 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：760mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG2307L-7
Single FETs, MOSFETs Overview
The DMG2307L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -3.8A at +25°C. The device offers a low on-state resistance of 90mΩ at VGS=-10V and 134mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 1.9W under short-pulse conditions. Packaged in an SOT-23 surface-mount format, it includes fast switching characteristics with turn-on rise time of 7.3ns and turn-off fall time of 13.4ns.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with minimal input capacitance
- Totally lead-free and fully RoHS compliant construction
Single FETs, MOSFETs Applications
- General purpose interfacing switch
- Power management functions
- Load switch for portable devices
Single FETs, MOSFETs Procurement Notes
Verify the component datasheet revision and date code markings against the manufacturer's official documentation before integration. Confirm that the specific ordering suffix matches the required tape and reel packaging quantity. Ensure compliance with environmental directives such as RoHS and halogen-free requirements as specified in the product definitions. Cross-reference the part number with authorized distributors to validate authenticity and traceability.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with low on-resistance in an SOT-23 package. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance values for your PCB layout. Consider the gate threshold voltage range when designing drive circuits to ensure reliable switching at the intended operating voltages.
Single FETs, MOSFETs Part Context
This part belongs to the DMG2307L series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for general-purpose interfacing and load switching applications in portable electronics.
Single FETs, MOSFETs Replacement Considerations
The datasheet explicitly recommends using DMP3165L as a replacement. Verify pinout compatibility and electrical specifications before substitution.
Single FETs, MOSFETs FAQ
What is the recommended replacement for the DMG2307L?
The datasheet explicitly states that the DMG2307L is not recommended for new designs and recommends using the DMP3165L instead.
Is the DMG2307L suitable for automotive applications?
Standard DMG2307L parts are not automatically automotive-compliant. For automotive applications requiring AEC-Q100/101 qualification, contact Diodes Incorporated or check for the separate DMG2307LQ datasheet.
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