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DMG3401LSN-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 30V 3A SC59. Review the specifications below when checking this part for your BOM.
The DMG3401LSN-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage of -30V and a continuous drain current of -3.7A at +25°C. The device offers low on-resistance, specified as 50mΩ max at VGS = -10V and 60mΩ max at VGS = -4.5V. Total gate charge is 11.6nC at VGS = -4.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SC59 surface-mount package.
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets the required environmental standards, specifically the halogen-free and antimony-free 'Green' device definition provided by the manufacturer. Ensure the SC59 package dimensions align with the target PCB footprint layout.
Select this component when a P-channel MOSFET with a -30V rating and approximately -3.7A continuous current capability is required. Evaluate the on-resistance specifications against the system's thermal dissipation requirements at the intended operating gate-source voltages. Consider the total gate charge value when designing the driver circuitry for optimal switching speeds.
This part belongs to the DMG3401LSN series of small-signal enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-resistance while maintaining rapid switching characteristics. The product line targets applications demanding efficient power management solutions within compact surface-mount form factors.
Public confirmed substitute part numbers are not available in the source material.
The maximum body diode continuous current (IS) is -1.5A.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
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