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DMG3402L-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 4A SOT23. Review the specifications below when checking this part for your BOM.
The DMG3402L-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 4A at +25°C. The device offers low on-resistance, specified as 52mΩ at VGS=10V with ID=4A, 65mΩ at VGS=4.5V with ID=3A, and 85mΩ at VGS=2.5V with ID=2A. Gate threshold voltage ranges from 0.6V to 1.4V. Total gate charge is 11.7nC at VGS=10V. The component operates within a junction temperature range of -55°C to +150°C and is housed in a standard SOT23 package.
Verify the specific ordering suffix matches the required packing quantity, such as -7 for 3000 units or -13 for 10000 units in tape and reel format. Confirm compliance requirements including RoHS and halogen-free status against project specifications. Ensure the selected variant aligns with the intended manufacturing process and moisture sensitivity level requirements defined in J-STD-020.
Select this component based on the required voltage rating of 30V and current capacity of 4A. Consider the on-resistance values at specific gate drive voltages relevant to the control circuit. Evaluate thermal performance using the provided junction-to-ambient resistance data. Verify that the SOT23 package dimensions fit the available PCB layout space and soldering constraints.
This part belongs to the DMG3402L series of N-channel MOSFETs produced by Diodes Incorporated under the DiodesZetex brand. It is designed for surface mount applications requiring compact packaging and reliable switching performance. The product line includes variants qualified for automotive applications, such as the DMG3402LQ, which follows separate datasheet documentation.
The DMG3402LQ is an automotive-compliant alternative within the same series. Verify pin compatibility and electrical parameters when substituting with other N-channel MOSFETs in the SOT23 package.
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